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| (R) STPS4045CP/CW POWER SCHOTTKY RECTIFIERS MAIN PRODUCTS CHARACTERISTICS IF(av) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n n n n n 2 x 20 A 45 V 175 C 0.63 V A1 K A2 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED A2 A1 K A2 K A1 DESCRIPTION Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged either in SOT-93 or TO-247 this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive Peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage SOT-93 STPS4045CP TO-247 STPS4045CW Value 45 30 Tc = 150C = 0.5 Per diode Per device 20 40 220 1 3 6000 - 65 to + 175 175 10000 Unit V A A A A A W C C V/s tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square tp = 1s Tj = 25C *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/5 July 2003 - Ed: 4C STPS4045CP/CW THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Rth (c) Parameter Per diode total Coupling Value 1.5 0.8 0.1 Unit C/W When the diodes 1 and 2 are used simultaneously : TJ(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C IF = 20 A IF = 40 A IF = 40 A 0.7 VR = VRRM 11 0.56 Min. Typ. Max. 200 40 0.63 0.94 0.83 Unit A mA V VF * Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation : P = 0.46 x IF(AV) + 0.0085 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 18 16 14 12 10 8 6 4 2 0 = 0.2 = 0.1 = 0.05 =1 = 0.5 Fig. 2: Average current versus ambient temperature (per diode). IF(av)(A) 22 20 18 16 14 12 10 8 6 4 2 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15C/W T T IF(av) (A) 0 2 4 6 8 =tp/T tp =tp/T tp Tamb(C) 50 75 100 125 150 175 10 12 14 16 18 20 22 24 26 0 25 2/5 STPS4045CP/CW Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values) (per diode). IM(A) 200 180 160 140 120 100 80 60 IM 40 20 0 1E-3 Fig. 6: Relative variation of thermal transient impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=75C Tc=100C Tc=125C 0.6 0.4 = 0.5 = 0.2 T 0.2 t = 0.1 Single pulse =0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 1E-3 1E-2 =tp/T tp 0.0 1E-4 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values) (per diode). IR(A) 5E+4 Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(nF) 5.0 1E+4 1E+3 1E+2 1E+1 1E+0 Tj=125C Tj=100C Tj=75C 1.0 Tj=50C Tj=25C VR(V) 0 5 10 15 20 25 30 35 40 45 VR(V) 0.1 1 2 5 10 20 50 3/5 STPS4045CP/CW Fig. 9: Forward voltage drop versus forward current (maximum values) (per diode). IFM(A) 200 100 Typical values Tj=125C Tj=25C Tj=125C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 PACKAGE MECHANICAL DATA SOT-93 DIMENSIONS REF. A C D D1 E F F3 F4 G H L L2 L3 L5 L6 O Millimeters Min. 4.70 1.90 0.50 1.10 10.80 14.70 Typ. Max. 4.90 2.10 2.50 2.00 0.78 1.30 1.75 2.10 11.10 15.20 12.20 16.20 18.0 4.15 31.00 4.10 Inches Min. Typ. Max. 1.185 0.193 0.075 0.083 0.098 0.078 0.020 0.031 0.043 0.051 0.069 0.083 0.425 0.437 0.279 0.598 0.480 0.638 0.709 0.156 0.163 1.220 0.157 0.161 3.95 4.00 4/5 STPS4045CP/CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Dia. Millimeters Min. Typ. Max. 5.16 2.60 0.80 1.40 3.00 2.00 1.90 3.00 10.90 15.45 19.85 3.70 18.30 14.20 34.05 5.35 2.00 5 60 3.55 3.65 0.140 16.03 21.09 4.30 19.13 20.30 41.38 6.30 3.00 0.608 0.781 0.146 0.720 0.559 1.341 0.211 0.079 2.40 0.075 3.40 0.118 Min. 0.191 0.086 0.015 0.039 4.85 2.20 0.40 1.00 Inches Typ. Max. 0.203 0.102 0.031 0.055 0.118 0.079 0.094 0.134 0.429 0.631 0.830 0.169 0.753 0.799 1.629 0.248 0.118 5 60 0.144 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Type STPS4045CP STPS4045CW n n n n Marking STPS4045CP STPS4045CW Package SOT-93 TO-247 Weight 3.97 g. 4.46 g. Base qty 30 30 Delivery mode Tube Tube COOLING METHOD: BY CONDUCTION (C) RECOMMENDED TORQUE VALUE: 0.8 N.M MAXIMUM TORQUE VALUE: 1.0 N.M. EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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